| PART |
Description |
Maker |
| SST85LD0128-120-C-LBZE |
NANDrive IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
|
Silicon Storage Technology, Inc.
|
| SDP3C-150-101-00 SDP3CI-300-101-S1 SDP3C-300-101-0 |
4 Mbps, IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, XMA68
|
SanDisk, Corp.
SANDISK CORP
|
| AM29F400BT-70EF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Spansion, Inc.
|
| UN1221 UN1222 UN1223 UN1224 |
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AIFD-02G-25 AIFD-064-05 AIFD-128-25 AIFD-256-25 AI |
100% IDE standard compatible, Compact Flash Specification standard
|
AAEON Technology
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| WED7GXXXIDE36 WED7G016IDE33ADC25 WED7G016IDE36ADC2 |
DimmDrive Solid State IDE Flash Module with Power Failure Protection IDE36 DimmDrive Solid State IDE Flash Module IDE33
|
WEDC[White Electronic Designs Corporation]
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| LC895297 |
Full CAV 20× CD-ROM Decoder with Built-in ATA-PI (IDE) Interface and CD-DSP(全CAV 20倍CD-ROM译码器带内置式ATAPI (IDE)接口CD-DSP) 全部角速度20 ×CD - ROM在阿拉木图内置解码器，皮（IDE）的接口CD -数字信号处理器（全角速度20倍速的CD - ROM译码器带内置式的ATAPI（IDE）的接口和光盘的DSP
Full CAV 20 x CD-ROM Decoder with Built-in ATA-PI (IDE) Interface and CD-DSP
CMOS LSI
Full CAV 20x CD-ROM Decoder with Built-in ATA-PI (IDE) Interface and CD-DSP
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| ULQ2436M 2436 |
COUNTDOWN POWER TIMER
COUNTDOWNPOWERTIMER
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
Audio Sample Rate Converter IC; IC Function:Audio Sample Rate Converter IC; Package/Case:28-SOIC; Leaded Process Compatible:No; No. of Channels:2; Operating Temp. Max:85 C; Operating Temp. Min:-40 C RoHS Compliant: Yes 的CountDown电源定时
|
ALLEGRO[Allegro MicroSystems]
AllegroMicroSystems
Allegro MicroSystems, Inc.
|
| ST72C314N2T1 ST72C314N4T6 ST72314N4B3 ST72314J2T1 |
IC-ST7 MICROCONTROLLER
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT TIMERS, SPI, SCI INTERFACES 8位单电压闪存，ADC6位定时器，SPI和脊髓损伤界面微控制
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, ADC, 16-BIT TIMERS, SPI, SCI INTERFACES 8位单电压闪存ADC6位定时器，SPI和脊髓损伤界面微控制
Indicator Lamp; Supply Voltage:14VDC; Lamp Base Type:Wire Leads; Color:Green; Current Rating:100mA; Mounting Hole Dia:12.7mm; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 8位单电压闪存，ADC6位定时器，SPI和脊髓损伤界面微控制
|
http://
STMicroelectronics N.V.
|
| MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
